?2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MMBF4416A Rev. A2
MMBF4416A N-Channel RF Amplifier
March 2005
MMBF4416A
N-Channel RF Amplifier
? This device is designed for RF amplifiers.
? Sourced from process 50.
Absolute Maximum Ratings*
Ta
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Ta=25°C
unless otherwise noted
* Pulse Test: Pulse Width ≤
300ms, Duty Cycle
≤
2%
Symbol Parameter Value Units
VDG
Drain-Gate Voltage 35 V
VGS
Gate-Source Voltage -35 V
IGF
Forward Gate Current 10 mA
TJ, TSTG
Operating and Storage Junction Temperature Range - 55 ~ 150
°C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V(BR)GSS
Gate-Source Breakdown Voltage VDS
= 0, I
G
= 1.0
μA-35 V
IGSS
Gate Reverse Current VGS
= -20V, V
DS
= 0 -100 pA
VGS(off) Gate Source Cut-off Voltage VDS
= 15V, I
D
= 1.0nA -2.5 -6.0 V
VGS
Gate Source Voltage VDS
= 15V, I
D
= 500
μA-1 -5.5V
On Characteristics
IDSS
Zero-Gate Voltage Drain Current VGS
= 15V, V
GS
= 0 5 15 mA
VGS(f) Gate-Source Forward Voltage VDS
= 0, I
G
= 1.0mA 1 V
Small Signal Characteristics
gfs
Forward Transfer Conductance * VDS
= 15V, V
GS
= 0, f = 1.0kHz 4500 7500
μmhos
gos
Output Conductance * VDS
= 15V, V
GS
= 0, f = 1.0kHz 50
μmhos
Ciss
Input Capacitance VDS
= 15V, V
GS
= 0, f = 1.0MHz 4.0 pF
Crss Reverse Transfer Capacitance VDS
= 15V, V
GS
= 0, f = 1.0MHz 0.8 pF
Coss
Output Capacitance VDS
= 15V, V
GS
= 0, f = 1.0MHz 2.0 pF
NF Noise Figure VDS
= 15V, V
GS
= 0, I
D
= 5mA,
4.0 dB
Rg
= 1k
?, f = 400MHz
D
SOT-23
Mark: 6BG
S
G
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